980-nm quantum dot lasers for high-power applications

Frank Klopf; Stefan Deubert; Johann-Peter Reithmaier; Alfred W. B. Forchel; Philippe Collot; Michel M. Krakowski

doi:10.1117/12.467959

22 May 2002 980-nm quantum dot lasers for high-power applications

Frank Klopf, Stefan Deubert, Johann-Peter Reithmaier, Alfred W. B. Forchel, Philippe Collot, Michel M. Krakowski

Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002) https://doi.org/10.1117/12.467959
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

980 nm GaInAs/(Al)GaAs quantum dot laser structures with a high internal quantum efficiency n_i of about 90%, and a low internal absorption <2.5 cm^-1 and a threshold current densities as low as 140 A/cm² have been fabricated. Laser diodes that show output powers of up to 4W from a single facet of a 100micrometers broad laser diode after AR/HR coating at 10 degree(s)C have been processed. The highest total output power for lasers with cleaved facets was obtained with a 200micrometers broad laser diode. This laser shows a maximum output power of 5W. Through the use of short period superlattices in the inner waveguide region we could significantly improve the high temperature properties compared to earlier devices. The lasers have characteristic temperatures T₀ of above 100 K up to an operation temperature of 110 degree(s)C. As a result our lasers show output powers as high as 1 W even at temperatures as high as 100 degree(s)C. In addition to quite competitive laser properties the rather broad gain profile of a quantum dot ensemble allows the fabrication of laser diodes with a reduced temperature-induced wavelength shift. Understanding the underlying effects and optimizing the cavity design, quantum dot lasers with wavelength shifts of 0.16 nm/K have been realized which is only half the value of a typical GaInAs/(Al)GaAs quantum well laser.

Citation Download Citation

Frank Klopf, Stefan Deubert, Johann-Peter Reithmaier, Alfred W. B. Forchel, Philippe Collot, and Michel M. Krakowski "980-nm quantum dot lasers for high-power applications", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); https://doi.org/10.1117/12.467959

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