Paper
16 July 2002 DUV optical metrology for the 90-nm node, CD linearity, contacts, and corner rounding
Louis M. Chacon, Nicholas G. Doe, Richard D. Eandi, Patrick St. Cin
Author Affiliations +
Abstract
Many techniques are used to reduce k1 for the 90nm node, including phase shift masks (PSM), assist features and optical proximity correction (OPC) features. Today, in addition to CD line widths, critical measurements of assist features, contact areas, and corner rounding, are now required to verify reticle integrity. New algorithms have been developed and implemented on the KMS100 DUV optical metrology tool to correct for iso/dense bias (optical proximity correction), assess corner rounding effects, and verify contact fidelity and printability. This paper presents new CD metrology studies for Chrome-on-Glass (COG) performed on a KMS100 DUV optical tool using these new metrology algorithms.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Louis M. Chacon, Nicholas G. Doe, Richard D. Eandi, and Patrick St. Cin "DUV optical metrology for the 90-nm node, CD linearity, contacts, and corner rounding", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473474
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KEYWORDS
Lenses

Photomasks

Deep ultraviolet

Metrology

Optical metrology

Algorithm development

Imaging systems

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