Paper
16 July 2002 TIS-WIS interaction characterization on overlay measurement tool
Kenji Hoshi, Eiichi Kawamura, Hiroshi Morohoshi, Hideki Ina, Takanori Fujimura, Hiroyuki Kurita, Joel L. Seligson
Author Affiliations +
Abstract
Modern overlay metrology tools achieve the required metrology accuracy by controlling critical asymmetries in the imaging optics, and by compensating for the remaining asymmetries through TIS-calibration. We extend our study on the TIS-WIS interaction in stepper alignment optics to the overlay metrology tool, and propose a new method for characterizing residual TIS. This method is based on the examination of the through-focus behavior of the metrology tool on a wafer with a simple, TIS-sensitive structure.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenji Hoshi, Eiichi Kawamura, Hiroshi Morohoshi, Hideki Ina, Takanori Fujimura, Hiroyuki Kurita, and Joel L. Seligson "TIS-WIS interaction characterization on overlay measurement tool", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473514
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Overlay metrology

Semiconducting wafers

Metrology

Monochromatic aberrations

Chemical mechanical planarization

Optical alignment

Wafer-level optics

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