Attenuating phase-shifting mask at 157 nm

Vladimir Liberman; Mordechai Rothschild; Steven J. Spector; Keith E. Krohn; Susan G. Cann; Stefan Hien

doi:10.1117/12.474603

30 July 2002 Attenuating phase-shifting mask at 157 nm

Vladimir Liberman, Mordechai Rothschild, Steven J. Spector, Keith E. Krohn, Susan G. Cann, Stefan Hien

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474603
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

An attenuating phase shifting mask has been designed, fabricated, and tested at 157 nm. It consists of two layers, a metal attenuator and a transparent phase shifter. The metal, platinum, was chosen for its chemical and radiation stability. The phase shifter was a commercial spin-on glass. A single step of pattern transfer has been implemented, which significantly simplifies the fabrication process of the mask. The lithographic advantage in increased depth of focus was demonstrated for 130-nm spaces and contacts, and it was found to agree with numerical simulations.

Citation Download Citation

Vladimir Liberman, Mordechai Rothschild, Steven J. Spector, Keith E. Krohn, Susan G. Cann, and Stefan Hien "Attenuating phase-shifting mask at 157 nm", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474603

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