Microloading characterization of 300-mm etch and CMP tools

Karl E. Mautz

doi:10.1117/12.475653

12 July 2002 Microloading characterization of 300-mm etch and CMP tools

Karl E. Mautz

Proceedings Volume 4692, Design, Process Integration, and Characterization for Microelectronics; (2002) https://doi.org/10.1117/12.475653
Event: Design, Process Integration, and Characterization for Microelectronics, 2002, Santa Clara, CA, United States

Abstract

An investigation of the microloading effects form the 300mm wafer Etch and CMP polish processes was done at SC300, a joint venture between Motorola and Infineon Technologies for 300mm wafer, process and equipment development in Dresden, Germany. Test wafers were constructed to approximate the structural features of DRAM and microprocessors devices, and standard or scaled-up processes were run to identify potential limitations and defects. Oxide dielectric etch and CMP process instability and microloading effects are know n to cause significant device yield loss.

Citation Download Citation

Karl E. Mautz "Microloading characterization of 300-mm etch and CMP tools", Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002); https://doi.org/10.1117/12.475653

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