Optical and electronic properties of tin quantum wires formed on vicinal surface of GaAs

Vladimir A. Kulbachinskii

doi:10.1117/12.478620

9 August 2002 Optical and electronic properties of tin quantum wires formed on vicinal surface of GaAs

Vladimir A. Kulbachinskii

Proceedings Volume 4762, ALT'01 International Conference on Advanced Laser Technologies; (2002) https://doi.org/10.1117/12.478620
Event: International Conference on: Advanced Laser Technologies (ALT'01), 2001, Constanta, Romania

Abstract

A number of delta-doped by Sn for a wide range of Sn doping densities structures on vicinal GaAs (001) substrates with a misorientation angle of 3 degree(s) have been prepared using molecular beam epitaxy growth technique. Because of the relatively high segregation ability, Sn, when deposited on the terraces, may accumulate at the step edges and form quasi-one dimensional channels. Magnetotransport, the Shubnikov de Haas (SdH) and the Hall effects, photoluminescence and photoconductivity have been investigated in the temperature range 0.4-300 K. The Hall resisitivity, SdH effect and the magnetoresistance were measured in magnetic fields up to 40 T directed perpendicular or parallel to the plane of the delta-layer. The photoconductivity has been investigated for wavelengths (lambda) equals650-1200nm in the temperature interval Tequals4.2-300 K.

Citation Download Citation

Vladimir A. Kulbachinskii "Optical and electronic properties of tin quantum wires formed on vicinal surface of GaAs", Proc. SPIE 4762, ALT'01 International Conference on Advanced Laser Technologies, (9 August 2002); https://doi.org/10.1117/12.478620

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