Paper
11 November 2002 Measurement of the 100 nm NIST SRM 1963 by laser surface light scattering
Thomas A. Germer, George W. Mulholland, Jung Hyeun Kim, Sheryl H. Ehrman
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Abstract
Accurate sizing of particles deposited on surfaces is important for the semiconductor, optical, and data storage industries. The recent availability of accurate light scattering models for non-ideal conditions enables the determination of particle size with a complete assessment of the measurement uncertainties. In this manuscript, we describe a light scattering measurement of the National Institute of Standards and Technology (NIST) Standard Reference Material (SRM) 1963 deposited onto a silicon wafer. The measurement was carried out using 441.6 nm, p-polarized light. The measurement yielded a value of 99.7 nm with an expanded uncertainty (95 % confidence limit) of 1.7 nm. The uncertainty is dominated by the reproducibility of the measurement. Uncertainties in the substrate optical properties, the thickness and optical properties of the substrate oxide, and the shape of the particle dominate the systematic uncertainty.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas A. Germer, George W. Mulholland, Jung Hyeun Kim, and Sheryl H. Ehrman "Measurement of the 100 nm NIST SRM 1963 by laser surface light scattering", Proc. SPIE 4779, Advanced Characterization Techniques for Optical, Semiconductor, and Data Storage Components, (11 November 2002); https://doi.org/10.1117/12.451747
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Cited by 15 scholarly publications.
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KEYWORDS
Particles

Optical spheres

Scattering

Light scattering

Semiconducting wafers

Silicon

Sensors

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