High-power diode lasers: technology and application in Europe

Martin Behringer; Franz Eberhard; Gerhard Herrmann; Johann Luft; J. Maric; Stefan Morgott; Marc Philippens; W. Teich

doi:10.1117/12.497970

3 March 2003 High power diode lasers: technology and application in Europe

Martin Behringer, Franz Eberhard, Gerhard Herrmann, Johann Luft, J. Maric, Stefan Morgott, Marc Philippens, W. Teich

Proceedings Volume 4831, First International Symposium on High-Power Laser Macroprocessing; (2003) https://doi.org/10.1117/12.497970
Event: LAMP 2002: International Congress on Laser Advanced Materials Processing, 2002, Osaka, Japan

Abstract

The application field of high power semiconductor lasers is growing rapidly and covers e.g. solid state laser pumping, metal and plastic welding, hard and soft soldering, suface treatment and others. Preferably those applications are attractive, which do not require extremely high beam quality. We have investigated high power diode-laser bars from 808 nm to 980 nm. The scope of this presentation is on focusability and beam quality. For better beam shaping structures with reduced fill factor of 25% to 30% were developed. They were operated in continuous wave operation at power levels of up to 55 W. Tests indicate extrapolated lifetimes of more than 100,000 hours at 40 W at 980 nm cw and about 10,000 hours at 45 W - 50 W at 940 nm and 808 nm. Monolithically stacked Nonostacks^R were investigated. Operation up to 100°C with excellent lifetimes could be demonstrated. New concepts and applications for low mode number high power diode lasers like tapered laser bars are presented. Examples for various current areas of interest in European research facilities will be given.

Citation Download Citation

Martin Behringer, Franz Eberhard, Gerhard Herrmann, Johann Luft, J. Maric, Stefan Morgott, Marc Philippens, and W. Teich "High power diode lasers: technology and application in Europe", Proc. SPIE 4831, First International Symposium on High-Power Laser Macroprocessing, (3 March 2003); https://doi.org/10.1117/12.497970

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