Nanotechnologies in semiconductor electronics

Oleg P. Pchelyakov; Aleksandr I. Toropov; Vladimir P. Popov; A. V. Latyshev; L. V. Litvin; Yury V. Nastaushev; Alexander L. Aseev

doi:10.1117/12.484564

29 July 2002 Nanotechnologies in semiconductor electronics

Oleg P. Pchelyakov, Aleksandr I. Toropov, Vladimir P. Popov, A. V. Latyshev, L. V. Litvin, Yury V. Nastaushev, Alexander L. Aseev

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Proceedings Volume 4900, Seventh International Symposium on Laser Metrology Applied to Science, Industry, and Everyday Life; (2002) https://doi.org/10.1117/12.484564
Event: Seventh International Symposium on Laser Metrology Applied to Science, Industry, and Everyday Life, 2002, Novosibirsk, Russian Federation

Abstract

The current state of the art and application of technology of molecular beam epitaxy, direct bonding of semiconductor wafers, electron beam lithography and probe nanolithography are reviewed on the base of results of research work carried out at the Institute of Semiconductor Physics (Novosibirsk).

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Oleg P. Pchelyakov, Aleksandr I. Toropov, Vladimir P. Popov, A. V. Latyshev, L. V. Litvin, Yury V. Nastaushev, and Alexander L. Aseev "Nanotechnologies in semiconductor electronics", Proc. SPIE 4900, Seventh International Symposium on Laser Metrology Applied to Science, Industry, and Everyday Life, (29 July 2002); https://doi.org/10.1117/12.484564

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