Characterization of 1.3-um wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low temperature and high pressure

Alfred R. Adams; Robin Fehse; Stanko Tomic; Eoin P. O'Reilly; Aleksey D. Andreev; Gareth Knowles; Terry E. Sale; Stephen J. Sweeney; Gunther Steinle; A. Ramakrishnan; Henning Riechert

doi:10.1117/12.481002

29 August 2002 Characterization of 1.3-um wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low temperature and high pressure

Alfred R. Adams, Robin Fehse, Stanko Tomic, Eoin P. O'Reilly, Aleksey D. Andreev, Gareth Knowles, Terry E. Sale, Stephen J. Sweeney, Gunther Steinle, A. Ramakrishnan, Henning Riechert

Author Affiliations +

Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.481002
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China

Abstract

By measuring the spontaneous emission from normally operating ~1.3um GaInNAs/GaAs-based lasers grown by MBE and by MOVPE we have quantitatively determined the variation of monomolecular (defect-related ~An), radiative (~Bn2) and Auger recombination (~Cn3) as a function of temperature from 130K to 370K. We find that A, B and C are remarkably independent of the growth method. Theoretical calculations of the threshold carrier density as a function of temperature were also performed using a 10 band k·p Hamiltonian from which we could determine the temperature variation of A, B and C. At 300K, A=11x10-8 sec-1, B=8x10-11 cm3 sec-1 and C= 6x10-29 cm6 sec-1. These are compared with theoretical calculations of the coefficients and good agreement is obtained. Our results suggest that by eliminating defect-related currents and reducing optical losses, the threshold current density of these GaInNAs/GaAs-based edge-emitting devices would be more than halved at room temperature. The results from studies of temperature and pressure variation of ~1.3um VCSELs produced by similar MBE growth could also be explained using the same recombination coefficients. They showed a broad gain spectrum and were able to operate over a wide temperature range.

Citation Download Citation

Alfred R. Adams, Robin Fehse, Stanko Tomic, Eoin P. O'Reilly, Aleksey D. Andreev, Gareth Knowles, Terry E. Sale, Stephen J. Sweeney, Gunther Steinle, A. Ramakrishnan, and Henning Riechert "Characterization of 1.3-um wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low temperature and high pressure", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.481002

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
15 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Vertical cavity surface emitting lasers

Temperature metrology

Laser damage threshold

Quantum wells

Gallium arsenide

Nitrogen

Solids

Show All Keywords

Keywords/Phrases

Search In:

Publication Years