Paper
20 September 2002 The research and making of two-photon response Si photodetector
Xiaoting Zhang, Hanlan Li, Gang Jia, Zhouxiong Zhou, Zhanguo Chen
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Abstract
The physical mechanism of two-photon response was studied in this letter by measuring characteristic of the two-photon response Si photodetector sample. And the conclusion was drew that field induced double frequency absorption was dominant in two-photon response, which established the foundation of fabricating high sensitivity two-photon response Si photodetector.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaoting Zhang, Hanlan Li, Gang Jia, Zhouxiong Zhou, and Zhanguo Chen "The research and making of two-photon response Si photodetector", Proc. SPIE 4927, Optical Design and Testing, (20 September 2002); https://doi.org/10.1117/12.471704
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Cited by 1 scholarly publication.
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KEYWORDS
Silicon

Absorption

Photodetectors

Resistance

Manufacturing

Diffusion

Second-harmonic generation

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