Paper
19 June 2003 Gain and luminescence modeling for high-power laser applications
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Abstract
A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated. A fully microscopic model for the optical properties is coupled to a drift-diffusion model for the mesoscopic charge and field distributions to calculate luminescence and gain spectra in barrier-doped laser material. Analyzing experiments on an optically pumped multi quantum-well structure it is shown that the electric fields arising from the charges of ionized dopants lead to strongly excitation dependent optical properties like significant differences between luminescence and gain wavelengths.
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Joerg Hader, Aramais R. Zakharian, Jerome V. Moloney, Thomas R. Nelson Jr., James E. Ehret, and Stephan W. Koch "Gain and luminescence modeling for high-power laser applications", Proc. SPIE 4993, High-Power Fiber and Semiconductor Lasers, (19 June 2003); https://doi.org/10.1117/12.479438
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KEYWORDS
Luminescence

Optical properties

Optical pumping

Quantum wells

High power lasers

Semiconductor lasers

Gallium arsenide

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