Paper
1 July 2003 Confocal photoluminescence method for measuring the carrier migration in structures with quantum dots
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Abstract
The migration of carriers in optically pumped semiconductor structures with quantum dots is investigated using a confocal setup. Experiments are performed in order to test the performances of the optical setup. The samples studied by optical confocal microscopy are the following: semi-insulating GaAs, InAs quantum dots grown directly in GaAs, InAs quantum dots grown inside a Ga0.85In0.15As quantum well and a Ga0.85In0.15As quantum well with GaAs barriers. Measurements are done in a range of temperatures starting from 78 K up to 295 K. A theoretical model for the migration length is presented. The solution of a diffusion-type equation is used to fit the experimental data.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dan Paul Popescu, Petr Georgievich Eliseev, and Kevin J. Malloy "Confocal photoluminescence method for measuring the carrier migration in structures with quantum dots", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); https://doi.org/10.1117/12.485707
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Cited by 1 scholarly publication.
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KEYWORDS
Quantum wells

Gallium arsenide

Quantum dots

Indium arsenide

Confocal microscopy

Gallium

Luminescence

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