Terahertz emitting devices based on intersubband transitions in SiGe quantum wells

T. N. Adam; R. T. Troeger; S. K. Ray; U. Lehmann; James Kolodzey

doi:10.1117/12.514391

11 June 2003 Terahertz emitting devices based on intersubband transitions in SiGe quantum wells

T. N. Adam, R. T. Troeger, S. K. Ray, U. Lehmann, James Kolodzey

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514391
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Terahertz electroluminescence was produced by intersubband transitions in silicongermanium quantum wells. The devices were grown by solid-source molecular-beam epitaxy on high-resistivity silicon substrates, and were fabricated by standard photolithography and processing techniques. Using FTIR spectroscopy at at temperature of 5 K, electroluminescence was observed around 9 THz. The emission was attributed to heavy-hole-to-light-hole transitions and demonstrates the potential for SiGe technology as terahertz emitters.

Citation Download Citation

T. N. Adam, R. T. Troeger, S. K. Ray, U. Lehmann, and James Kolodzey "Terahertz emitting devices based on intersubband transitions in SiGe quantum wells", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514391

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