F2 resist outgassing studied by in situ QCM technique

Masamitsu Shirai; Toyofumi Shinozuka; Masahiro Tsunooka; Seiichi Ishikawa; Toshiro Itani

doi:10.1117/12.485090

12 June 2003 F₂ resist outgassing studied by in situ QCM technique

Masamitsu Shirai, Toyofumi Shinozuka, Masahiro Tsunooka, Seiichi Ishikawa, Toshiro Itani

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485090
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

An in-situ quartz crystal microbalance (QCM) method was applied to quantitatively measure the outgassing from F₂ resist materials in real time. The frequency change of quartz crystal coated with resist films was monitored during exposure and the mass desorbed from the resist films was calculated as amounts of outgassing. The sensitivity of the present QCM systems was about 1 ng. The outgassing rate during exposure was strongly dependent on the structure of polymer backbone and blocking unit of resists. VUV light-induced degradation of resist films was investigated using reflection absorption FT-IR spectroscopy and it was confirmed that the outgassing was mainly generated from the photodegradation of acid labile protecting groups in resist films. Outgassing from photoacid generators incorporated in fluorinated cyclopolymers and poly(methacrylonitrile) films was also studied. Outgassing rate for diphenyliodonium triflate and diphenyliodonium nonaflate was slightly higher than those for triphenylsulfonium triflate and triphenylsulfonium nonaflate.

Citation Download Citation

Masamitsu Shirai, Toyofumi Shinozuka, Masahiro Tsunooka, Seiichi Ishikawa, and Toshiro Itani "F₂ resist outgassing studied by in situ QCM technique", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485090

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