Paper
26 June 2003 Extending ArF to the 65-nm node with full-phase lithography
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Abstract
Experimental lithographic data are presented that show that ArF can comfortably be extended to the 65-nm node. All features in the designs were patterned with alternating phase-shift lithography according to the Full-Phase methodology without any form of optical proximity corrections. Process windows through-pitch, latitude trade-off curves, CD uniformity and pitch linearity are presented. Furthermore, the emphasis is on 2-dimensional design performance for 60, 70 and 80-nm node designs at k1 values as low as 0.28. The current ArF infrastructure for mask making, step-and-scan systems, and resist technology was used for this.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank A.J.M. Driessen, Christophe Pierrat, Geert Vandenberghe, Kurt G. Ronse, Paul van Adrichem, and Hua-Yu Liu "Extending ArF to the 65-nm node with full-phase lithography", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485426
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KEYWORDS
Photomasks

Lithography

Binary data

Optical lithography

Optical proximity correction

Logic

Scanning electron microscopy

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