Infrared emission from silicon and metallic lamellar grating

Nathan Pinhas; Shlomo Hava

doi:10.1117/12.501119

29 April 2003 Infrared emission from silicon and metallic lamellar grating

Nathan Pinhas, Shlomo Hava

Proceedings Volume 5118, Nanotechnology; (2003) https://doi.org/10.1117/12.501119
Event: Microtechnologies for the New Millennium 2003, 2003, Maspalomas, Gran Canaria, Canary Islands, Spain

Abstract

The infrared normal spectral emissions from degenerate (metallic-like) silicon and metallic (nickel) lamellar grating structures were investigated. The gratings were micromachined on (110) silicon wafer was with differing periods, groove widths and groove depths, where the dimensions of all samples were with feature sizes comparable to the measurement wavelengths (2.5 - 25 μm). The measurement temperatures for all samples were in the range 27 to 740 °C. Infrared normal transmission through diffraction was also measured. In general, it was found that the spectral emission of the metallic gratings was different from the degenerate silicon grating. This because the bulk absorption in the silicon samples was affecting the emission.

Citation Download Citation

Nathan Pinhas and Shlomo Hava "Infrared emission from silicon and metallic lamellar grating", Proc. SPIE 5118, Nanotechnology, (29 April 2003); https://doi.org/10.1117/12.501119

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KEYWORDS

Silicon

Absorption

Infrared radiation

Semiconducting wafers

Diffraction gratings

Diffraction

Nickel

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