Effect of photo-induced space charge on dependence of intrinsic threshold photoresistor amplification on two-level recombination impurity concentration

Vyacheslav A. Kholodnov; Pavel S. Serebrennikov

doi:10.1117/12.517358

30 September 2003 Effect of photo-induced space charge on dependence of intrinsic threshold photoresistor amplification on two-level recombination impurity concentration

Vyacheslav A. Kholodnov, Pavel S. Serebrennikov

Author Affiliations +

Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517358
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Beyond the range of standard quasi-neutrality approximation dependence of photoelectric gain coefficient G on two-level recombination centers concentration N and applied electric field strength E₀ is studied. Model: inter-band homogeneous absorption of weak radiation, acceptor type of recombination centers, extracting current contacts. The physical interpretation of the results obtained is given.

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Vyacheslav A. Kholodnov and Pavel S. Serebrennikov "Effect of photo-induced space charge on dependence of intrinsic threshold photoresistor amplification on two-level recombination impurity concentration", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517358

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