Hole Zeeman effect in Ge/Si quantum dots

A. V. Nenashev; A. Dvurechenskii; A. F. Zinovieva

doi:10.1117/12.517895

23 July 2003 Hole Zeeman effect in Ge/Si quantum dots

A. V. Nenashev, A. Dvurechenskii, A. F. Zinovieva

Proceedings Volume 5128, First International Symposium on Quantum Informatics; (2003) https://doi.org/10.1117/12.517895
Event: First International Symposium on Quantum Informatics, 2002, Lipki, Russian Federation

Abstract

We investigate theoretically the Zeeman effect on the lowest confined hole in quantum dots. In frame of tight-binding approach we propose a method of calculating the Lande factor for localized states. The principal values of the g-factor for the ground hole state in the self-assembled Ge/Si quantum dot are calculated. We find the strong g-factor anisotropy - the components g_xx, g_yy are one order smaller than the g_zz-component, g_zz=15.71, g_xx=1.14, g_yy=1.76. The efficiency of the developed method is demonstrated by calculating the size-dependence of g-factor and by establishment of the connectin with 2D case. The g-factor anisotropy increases with the island and the ground hole state g-factor goes to heavy hole g-factor. The analysis of the wave function structure shows that g-factor and its size-dependence are mainly controlled by the contribution of the state with J_z=±3/2.

Citation Download Citation

A. V. Nenashev, A. Dvurechenskii, and A. F. Zinovieva "Hole Zeeman effect in Ge/Si quantum dots", Proc. SPIE 5128, First International Symposium on Quantum Informatics, (23 July 2003); https://doi.org/10.1117/12.517895

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