Paper
28 August 2003 Effect of chamber seasoning on the chrome dry etch process
Author Affiliations +
Abstract
Chamber surface condition in high-density plasma etch reactors can dramatically affect process performance. The well-known “first wafer effect” in wafer etch processes is often reduced by a “seasoning” process which runs an appropriate etch chemistry on a dummy wafer prior to the etch of a production wafer. The seasoning process has proven to be an effective method for minimizing wafer process shift, but it has not been examined for photomask production using typical dry etch chemistries. In this work, a series of PR/Cr/Quartz photomasks were etched in a Etec Systems, Inc. Tetra photomask etch system with the goal of quantifying the amount of change in etch rate and critical dimension (CD's) following an isopropanol “wet” cleaning of the chamber, as well as the amount of seasoning necessary to minimize the observed process shift using a standard Cl2/O2/He chemistry. The chamber seasoning and etch processes were observed via in-situ recording of optical emission from the plasma reactor with a CCD array and monochromator. Alumina coupons affixed to different areas of the chamber prior to mask seasoning/etching were subjected to X-Ray Photoelectron Spectroscopy as well as Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS) to determine the identity of the chemical species deposited in the chamber during the seasoning/etching process. Results from these etching processes clearly indicated the presence of a “first mask effect,” which can be reduced by a seasoning process appropriate for the particular chemistry involved. Alumina coupon surface analysis revealed a negligible amount of deposition accumulating during the experiments.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jason O. Clevenger, Melisa J. Buie, and Nicole L. Sandlin "Effect of chamber seasoning on the chrome dry etch process", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504053
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CITATIONS
Cited by 1 scholarly publication and 2 patents.
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KEYWORDS
Etching

Chromium

Photomasks

Semiconducting wafers

Chemistry

Plasma

Plasma etching

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