Efficient hybrid optical proximity correction method based on the flow of design for manufacturability (DfM)

Toshiya Kotani; Hirotaka Ichikawa; Takanori Urakami; Shigeki Nojima; Sachiko Kobayashi; Yoko Oikawa; Satoshi Tanaka; Atsuhiko Ikeuchi; Kiminobu Suzuki; Soichi Inoue

doi:10.1117/12.504271

28 August 2003 Efficient hybrid optical proximity correction method based on the flow of design for manufacturability (DfM)

Toshiya Kotani, Hirotaka Ichikawa, Takanori Urakami, Shigeki Nojima, Sachiko Kobayashi, Yoko Oikawa, Satoshi Tanaka, Atsuhiko Ikeuchi, Kiminobu Suzuki, Soichi Inoue

Author Affiliations +

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504271
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

Design and optical proximity correction (OPC) flow with hybrid OPC and manufacturability check (MC) tool was found to be effective for making robust pattern formation without any hot spots within feasible lead time under the low-k1 lithography condition. MC at design stage is essential for cleaning up hot spots in three ways; the refinement of design rule, the guideline for repairing hot spots for designers and the refinement of OPC deck. Hybrid OPC and MC tools with library- and model-based modules are available for reducing lead time by taking advantage of library system. Due to the design and OPC flow with the library-based OPC and MC tool, total lead time can be reduced to 55% of that in the case of conventional flow with MC. Assuming that a refined mask is ordered due to issue of hot spots without MC, the total lead time in the new flow can be reduced to 11% of that in the case of conventional technology.

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Toshiya Kotani, Hirotaka Ichikawa, Takanori Urakami, Shigeki Nojima, Sachiko Kobayashi, Yoko Oikawa, Satoshi Tanaka, Atsuhiko Ikeuchi, Kiminobu Suzuki, and Soichi Inoue "Efficient hybrid optical proximity correction method based on the flow of design for manufacturability (DfM)", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504271

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