HgCdTe epilayers on GaAs: growth and devices

Vasily S. Varavin; V. V. Vasiliev; Sergey A. Dvoretsky; Nikolay N. Mikhailov; Victor N. Ovsyuk; Yuri G. Sidorov; A. O. Suslyakov; M. V. Yakushev; Alexander L. Aseev

doi:10.1117/12.519761

22 October 2003 HgCdTe epilayers on GaAs: growth and devices

Vasily S. Varavin, V. V. Vasiliev, Sergey A. Dvoretsky, Nikolay N. Mikhailov, Victor N. Ovsyuk, Yuri G. Sidorov, A. O. Suslyakov, M. V. Yakushev, Alexander L. Aseev

Author Affiliations +

Proceedings Volume 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics; (2003) https://doi.org/10.1117/12.519761
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

View of basic and specific physical and chemical features of growth and defect formation in mercury cadmium telluride (MCT) heterostructures (HS's) on GaAs substrates by molecular beam epitaxy (MBE) was made. On the basis of this knowledge a new generation of ultra high vacuum set, ultra-fast ellipsometer of high accuracy and automatic system for control of technological processes was produced for reproducibility of MCT Hs's growth on substrates up to 4" in diameter. The development of industrially oriented technolgoy of MCT HS's growth by MBE on GaAs substrates 2" in diameter and without intentional doping is presented. The electrical characteristics of n-type and p-type of MCT HS's and uniformity of MCT composition over the surface area are excellent. The residual donor and acceptor centres are supposed as hypothetically tellurium atoms in metallic sublattice ("antisite" tellurium) and double-ionised mercury vacancies. The technology of fabricating focal plane arrays is developed. The high quality characteristics of infrared detectors conductance and diode mode are measured. Calculations of detector parameters predicted the improvement in serial resistance and detectivity of infrared diode detectors based on MCT heterostructures with graded composition throughout the thickness.

Citation Download Citation

Vasily S. Varavin, V. V. Vasiliev, Sergey A. Dvoretsky, Nikolay N. Mikhailov, Victor N. Ovsyuk, Yuri G. Sidorov, A. O. Suslyakov, M. V. Yakushev, and Alexander L. Aseev "HgCdTe epilayers on GaAs: growth and devices", Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); https://doi.org/10.1117/12.519761

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available