Paper
6 October 2003 Microstructure modification of zirconium oxide thin films for application in laser systems
Jerzy Ciosek, Wojciech Paszkowicz, Piotr Pankowski, Jozef Firak, Urszula Stanislawek, Roman Ostrowski
Author Affiliations +
Proceedings Volume 5230, Laser Technology VII: Progress in Lasers; (2003) https://doi.org/10.1117/12.531767
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Abstract
Thin films of zirconia were deposited on quartz substrates by conventional reactive electron beam deposition and ion-assisted deposition. The influence of the post-deposition annealing between 400°C and 900°C on the structural and optical properties and on the surface morpohology was investigated. It is shown that after post-deposition annealing the ZrO2 films the degree of order becomes higher. The contribution of the monoclinic phase increases with the rise of annealing temperature. The post-deposition annealed (temperature range: 700-900°C) samples exhibit lower threshold to damage for the radiation of pulse Nd:YAG laser. Correlation between the observed film properties and laser damage threshold is discussed.
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Jerzy Ciosek, Wojciech Paszkowicz, Piotr Pankowski, Jozef Firak, Urszula Stanislawek, and Roman Ostrowski "Microstructure modification of zirconium oxide thin films for application in laser systems", Proc. SPIE 5230, Laser Technology VII: Progress in Lasers, (6 October 2003); https://doi.org/10.1117/12.531767
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KEYWORDS
Annealing

Oxides

Oxygen

Zirconium

Laser damage threshold

Refractive index

Thin films

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