Carbon nanotube transistors: an evaluation

Leonardo C. Castro; David L. John; David L. Pulfrey

doi:10.1117/12.533349

2 April 2004 Carbon nanotube transistors: an evaluation

Leonardo C. Castro, David L. John, David L. Pulfrey

Proceedings Volume 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III; (2004) https://doi.org/10.1117/12.533349
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

A simple, non-equilibrium model is used to evaluate the likely DC performance of carbon nanotube field-effect transistors. It is shown that, by appropriate work function engineering of the source, drain and gate contacts to the device, the following desirable properties should be realizable: a sub-threshold slope close to the thermionic limit; a conductance close to the interfacial limit; an ON/OFF ratio of around 10³; ON current and transconductance close to the low-quantum-capacitance limit.

Citation Download Citation

Leonardo C. Castro, David L. John, and David L. Pulfrey "Carbon nanotube transistors: an evaluation", Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); https://doi.org/10.1117/12.533349

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