MeV Implantation In Semiconductors

Nathan W. Cheung

doi:10.1117/12.946460

9 April 1985 MeV Implantation In Semiconductors

Nathan W. Cheung

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946460
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

The residual damage distributions created by MeV dopant implantation in semiconductors show that in-situ annealing is important for defect formation. Device-quality silicon can be obtained at the top few microns of the silicon substrate after a post-implant annealing cycle. A family of majority-carrier and minority-carrier devices have been fabricated by incorporating a MeV implantation step with conventional integrated-circuit processing.

Citation Download Citation

Nathan W. Cheung "MeV Implantation In Semiconductors", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946460

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