Dual-wavelength semiconductor laser with 191-nm mode spacing

Chi-Chia Huang; Ching-Fuh Lin

doi:10.1117/12.525582

11 May 2004 Dual-wavelength semiconductor laser with 191-nm mode spacing

Chi-Chia Huang, Ching-Fuh Lin

Proceedings Volume 5365, Novel In-Plane Semiconductor Lasers III; (2004) https://doi.org/10.1117/12.525582
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

A very wide tuning range of dual-wavelength semiconductor lasers with properly designed nonidentical InGaAsP quantum wells is reported. By well aligning the external cavity, the dual-wavelength operation can be achieved with a record wavelength separation about 191 nm (27.4 THz) at 22.7°C. The wide separation of two wavelengths is possible due to a proper modification of the external-cavity configuration and reduced gain competition of laser modes.

Citation Download Citation

Chi-Chia Huang and Ching-Fuh Lin "Dual-wavelength semiconductor laser with 191-nm mode spacing", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); https://doi.org/10.1117/12.525582

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available