A High Performance Negative X-Ray Resist : CPMS-X(Pd)

Nobuyuki Yoshioka; Yoshiki Suzuki; Teruhiko Yamazaki

doi:10.1117/12.947485

20 June 1985 A High Performance Negative X-Ray Resist : CPMS-X(Pd)

Nobuyuki Yoshioka, Yoshiki Suzuki, Teruhiko Yamazaki

Proceedings Volume 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV; (1985) https://doi.org/10.1117/12.947485
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

The characteristics of CPMS (chlorinated polymethylstyrene) to Pd Loc were investigated to obtain the high performance negative x-ray resist. From the results, the high sensitive x-ray negative resist (Dg^0.5=17mJ/cm²), CPMS-X(Pd), were obtained by determining both the optimum molecular weight and the optimum chlorine content to Pd Loc. It was found that this resist also has both high contrast and high dry etching resistivity. This resist can be believed to be a milestone for practical use of x-ray lithography for future VLSI devices.

Citation Download Citation

Nobuyuki Yoshioka, Yoshiki Suzuki, and Teruhiko Yamazaki "A High Performance Negative X-Ray Resist : CPMS-X(Pd)", Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985); https://doi.org/10.1117/12.947485

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