Paper
24 May 2004 Effect of inline dose and focus monitoring and control on post-etch CD
Berta A. Dinu, Venkatram Subramony, Pei Chin Lim, Dawn Goh, Brad J. Eichelberger, Kwong Boo Chew, Kevin M. Monahan
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Abstract
Due to the continuous shrinking of the design rules and, implicitly, of the lithographic process window, it becomes more and more important to implement a dynamic, on product, process monitoring and control based on both dose and focus parameters. The method we present targets lot-to-lot, inter-field and intra-field dose and focus effect monitoring and control. The advantage of simultaneous dose and focus control over the currently used CD correction by adjusting exposure dose only is visible in improvement of the CD distributions both at pre-etch and at post-etch phases. The 'On Product' monitoring and compensation is based on the optical measurement of a special compact line end shortening target which provides the unique ability to separate dose from focus on production wafers.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Berta A. Dinu, Venkatram Subramony, Pei Chin Lim, Dawn Goh, Brad J. Eichelberger, Kwong Boo Chew, and Kevin M. Monahan "Effect of inline dose and focus monitoring and control on post-etch CD", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.535241
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Semiconducting wafers

Etching

Critical dimension metrology

Data modeling

Standards development

Lithography

Process control

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