Dependence of ArF resist on exposed area ratio

Eishi Shiobara; Kenji Chiba; Kei Hayasaki; Daisuke Kawamura

doi:10.1117/12.535142

14 May 2004 Dependence of ArF resist on exposed area ratio

Eishi Shiobara, Kenji Chiba, Kei Hayasaki, Daisuke Kawamura

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.535142
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

We investigated dependence of ArF resist on Exposed Area Ratio (EAR). Because it can be one of the CD variation factor and it is difficult to correct by OPC. Acrylate polymer based resist showed dependence on EAR. At low EAR, resist showed T-top profile and its CD became large. It could be considered that the profile change was caused by acid evaporation and re-sticking. Resist profile simulation indicated that CD variation appeared at only low EAR. To decreasing the effect of acid evaporation and re-sticking, we tried to increase the amount of acid evaporation by increasing PAB temperature. CD variation by EAR was decreased with increasing PAB temperature.

Citation Download Citation

Eishi Shiobara, Kenji Chiba, Kei Hayasaki, and Daisuke Kawamura "Dependence of ArF resist on exposed area ratio", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.535142

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