Rapid supercritical drying techniques for advanced lithography

Hideo Namatsu

doi:10.1117/12.533981

14 May 2004 Rapid supercritical drying techniques for advanced lithography

Hideo Namatsu

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.533981
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

A rapid supercritical drying process for resist patterns has been developed that features three novel techniques: the removal of rinse water based on a difference in specific gravity, rapid heating with a hot wafer holder, and the rapid release of supercritical fluid using helium. These techniques are efficient and cause no damage to resist patterns because no harmful chemicals, such as surfactants, are used. In addition, the effectiveness of these techniques has been demonstrated on several types of resists: polyhydroxystyrene-based, methacrylate-based, and fluoropolymer-based resists, which are used in 248-nm (KrF), 193-nm (ArF), and 157-nm (F₂) lithography, respectively. The release time for helium is less than 30 seconds. The short time needed for this supercritical drying process makes it very practical for both current and next-generation lithography.

Citation Download Citation

Hideo Namatsu "Rapid supercritical drying techniques for advanced lithography", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.533981

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