A 65-nm node SRAM solution using alt-PSM with ArF lithography

Frank A.J.M. Driessen; Mary T. Zawadzki; Prakash R. Krishnan; Artur Balasinski; Geert Vandenberghe

doi:10.1117/12.540311

3 May 2004 A 65-nm node SRAM solution using alt-PSM with ArF lithography

Frank A.J.M. Driessen, Mary T. Zawadzki, Prakash R. Krishnan, Artur Balasinski, Geert Vandenberghe

Proceedings Volume 5379, Design and Process Integration for Microelectronic Manufacturing II; (2004) https://doi.org/10.1117/12.540311
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

We present design-for-manufacturing and yield (DfM/DfY) results on SRAM of the 65-nm node by connecting knowledge of device performance with that of lithographic optical enhancement techniques. Of special interest was the lithographic quality of line-ends and gates, the former being the most critical for yield and manufacturing control. Scalability towards lower technology nodes was also part of the choice. All these considerations led to the choice of alternating-aperture phase-shift lithography as optimal reticle-enhancement technique. Predictions from simulations were verified on the wafer for SRAM cells of multiple geometry contexts, misalignment was included, and the illuminator was optimized.

Citation Download Citation

Frank A.J.M. Driessen, Mary T. Zawadzki, Prakash R. Krishnan, Artur Balasinski, and Geert Vandenberghe "A 65-nm node SRAM solution using alt-PSM with ArF lithography", Proc. SPIE 5379, Design and Process Integration for Microelectronic Manufacturing II, (3 May 2004); https://doi.org/10.1117/12.540311

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