Polycrystalline silicon for semiconductor devices

Dmitri E. Milovzorov

doi:10.1117/12.557920

28 May 2004 Polycrystalline silicon for semiconductor devices

Dmitri E. Milovzorov

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557920
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

The optical properties of polycrystalline silicon films with oxygen incorporation in grain boundary were experimentally studied. The Raman scattering photoluminescent and Fourier-transformed infrared spectra were measured. The morphology of the films were studied by atomic force microscopy. The strong correlation between the oxygen content and optical properties, and polarization was found. The oxygen diffuse incorporation corresponds the energetic levels in band gap around E_c-0.27 eV. The thermal annealing of polycrystalline film by the temperature more than 150° C produces the siloxane bonding with defect level in energy diagram near E_c-0.14 eV. The quantum beats of intensity of optical and electronic signal due to the quantum interference of closed electronic states was studied.

Citation Download Citation

Dmitri E. Milovzorov "Polycrystalline silicon for semiconductor devices", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.557920

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