Paper
30 August 2004 Characterization of photocurrent of mid-wavelength quantum-well infrared photodetector (MW-QWIP)
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Abstract
We investigated the mechanism of the photocurrent transmission in mid-wavelength quantum-well infrared photodetectors that were made using InGaAs/AlGaAs quantum wells so that their peak absorption would be at a wavelength near 5 μm. Analyzing the bias-voltage dependence of the photocurrent for the samples with different well layer thicknesses, we found that the photocurrent transmission could be accounted for by taking into account the tunneling process via the triangular barrier, the effect of the intrinsic electric field due to the unintentional impurities, and the effect of the drift velocity.
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Yasuhito Uchiyama, Hironori Nishino, Yusuke Matsukura, Kazuo Ozaki, and Toshio Fujii "Characterization of photocurrent of mid-wavelength quantum-well infrared photodetector (MW-QWIP)", Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); https://doi.org/10.1117/12.542964
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KEYWORDS
Absorption

Indium gallium arsenide

Quantum well infrared photodetectors

Gallium arsenide

Infrared radiation

Quantum wells

Aluminum

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