Thermal donors removing in silicon single-crystal wafers

Jiri Lunacek; Daniel Kuchar; Michal Lesnak

doi:10.1117/12.560668

7 April 2004 Thermal donors removing in silicon single-crystal wafers

Jiri Lunacek, Daniel Kuchar, Michal Lesnak

Proceedings Volume 5445, Microwave and Optical Technology 2003; (2004) https://doi.org/10.1117/12.560668
Event: Microwave and Optical Technology 2003, 2003, Ostrava, Czech Republic

Abstract

The paper solves the optimization problem of thermal donors (TD) removing in Si-single crystal wafers produced in the TEROSIL company. TD are removed during subsequent annealing process by temperature 620°C and time 20 min. Amount of the residual TD is determined by electrical resistivity measurement. The first results indicate possibility to modify the annealing process in order to increase its effectiveness.

Citation Download Citation

Jiri Lunacek, Daniel Kuchar, and Michal Lesnak "Thermal donors removing in silicon single-crystal wafers", Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); https://doi.org/10.1117/12.560668

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