Evaluation of the mechanical properties of square membranes prestressed by PECVD silicon oxynitride thin films

Michal Jozwik; Christophe Gorecki; Patrick Delobelle; Andrei Sabac; Malgorzata Kujawinska

doi:10.1117/12.569806

2 August 2004 Evaluation of the mechanical properties of square membranes prestressed by PECVD silicon oxynitride thin films

Michal Jozwik, Christophe Gorecki, Patrick Delobelle, Andrei Sabac, Malgorzata Kujawinska

Author Affiliations +

Proceedings Volume 5532, Interferometry XII: Applications; (2004) https://doi.org/10.1117/12.569806
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

A very broad field of relevant technologies and testing methods for silicon micromechanical elements had to be limited to specific elements and adapted methodologies including experimental and numerical methods. In particular, the bimorph micromembranes under buckling are key elements for investigations of their mechanical properties. Due to optical quality of silicon-based layers deposited on micromechanical devices under consideration, the two-beam interferometry with computer interferogram processing is well adapted for shape and deformation measuring, while the nanoindentation is able to extract the hardness as well as the Young’s modulus. In this contribution, we investigate the silicon square membranes prestressed by deposition of silicon oxinitride (SiO_xN_y) films fabricated by PECVD. The combination of experimental techniques with fine elements method (FEM) proposed here offers a powerful tools for investigation of residual stress of SiO_xN_y layers. The distribution of residual stress is monitored as a function of the refractive index of SiO_xN_y films, establishing the correlation between the optical and micromechanical properties of deposited thin films.

Citation Download Citation

Michal Jozwik, Christophe Gorecki, Patrick Delobelle, Andrei Sabac, and Malgorzata Kujawinska "Evaluation of the mechanical properties of square membranes prestressed by PECVD silicon oxynitride thin films", Proc. SPIE 5532, Interferometry XII: Applications, (2 August 2004); https://doi.org/10.1117/12.569806

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available