Paper
22 October 2004 The phase transition analysis of the vanadium dioxide film prepared by ion-beam-enhanced deposition method
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Abstract
The phase transition characteristic of the vanadium dioxide (VO2) film prepared by ion beam enhanced deposition (IBED) method was studied. The lattice distortion hypothesis was supposed to simulate resistance change of the VO2 polycrystalline film with temperature increasing and the simulation result was explained based on Landau theory. Due to the present of argon atom in interstitial site of VO2 lattice or grain boundary, the semiconductor- to-metal phase transition began at 48°C in some grains, obviously lower than the phase transition temperature of VO2 single crystal.
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Ningyi Yuan, Jinhua Li, and Ge Li "The phase transition analysis of the vanadium dioxide film prepared by ion-beam-enhanced deposition method", Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); https://doi.org/10.1117/12.561406
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KEYWORDS
Vanadium

Transition metals

Argon

Crystals

Chemical species

Distortion

Semiconductors

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