Proposal of using EUVL for PXL

Kiwamu Takehisa

doi:10.1117/12.569651

6 December 2004 Proposal of using EUVL for PXL

Kiwamu Takehisa

Proceedings Volume 5567, 24th Annual BACUS Symposium on Photomask Technology; (2004) https://doi.org/10.1117/12.569651
Event: Photomask Technology, 2004, Monterey, California, United States

Abstract

A new idea of writing a PXL (Proximity X-ray Lithography) mask is presented, in which a EUVL (extreme ultraviolet lithography) exposure tool is used as a mask repeater. EUV power of less than 1W is enough to write a PXL mask within 5 minutes, and an expensive EUV mask blank can be recycled because the mother mask is not necessary once a PXL mask is written. A EUV mask repeater especially consisting of a high-NA Micro Exposure Tool (MET) makes it possible to write a PXL mask for the 32 nm nodes and after. The new system can also be applied to other lithography tools using a 1X: such as LEEPL (Low Energy E-Beam Proximity Lithography) and imprint lithography.

Citation Download Citation

Kiwamu Takehisa "Proposal of using EUVL for PXL", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.569651

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