Design and analysis of wide-band InGaAlAs/InP superluminescent light-emitting diodes

Alain Champagne; Michel Lestrade; Romain Maciejko

doi:10.1117/12.567345

20 December 2004 Design and analysis of wide-band InGaAlAs/InP superluminescent light-emitting diodes

Alain Champagne, Michel Lestrade, Romain Maciejko

Proceedings Volume 5577, Photonics North 2004: Optical Components and Devices; (2004) https://doi.org/10.1117/12.567345
Event: Photonics North, 2004, Ottawa, Ontario, Canada

Abstract

We use a quasi-three-dimensional numerical model combining finite element calculations in the x - y plane and a longitudinal optical model for the design and the simulation of wide band superluminescent InGaAlAs/InP light emitting diodes (SLEDs). It is shown that by using an active region with a continuously varying composition, bulk devices can provide singlelobe spectra of more than 100 nm full-width-at-half-maximum (FWHM) and output powers of a few tens of mW. This is broader than multiple quantum-well (MQW) device singlelobe spectra which do not exceed ~70 nm FWHM in the same power range.

Citation Download Citation

Alain Champagne, Michel Lestrade, and Romain Maciejko "Design and analysis of wide-band InGaAlAs/InP superluminescent light-emitting diodes", Proc. SPIE 5577, Photonics North 2004: Optical Components and Devices, (20 December 2004); https://doi.org/10.1117/12.567345

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available