Paper
31 January 2005 Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells
Yun Xu, Xiaopeng Zhu, Guofeng Song, Qing Cao, Liang Guo, Yuzhang Li, Lianghui Chen
Author Affiliations +
Abstract
Compositional distribution of the quantum well and barrier after quantum well intermixing for GaInP/AlGaInP system was theoretically analyzed on the basis of atom diffusion law. With the compositional distribution result, the valence subband structure of the intermixed quantum well was calculated on the basis of 6×6 Luttinger-Kohn Hamiltonian, including spin-orbit splitting effects. To get more accurate results in the calculation, a full 6-band problem was solved without axial approximation, which had been widely used in the Luttinger-Kohn model to simplify the computational efforts, since there was a strong warping in the GaInP valence band. At last, the bandgap energy of the intermixed quantum well was obtained and the calculation result is of much importance in the analysis of quantum well intermixing experiments.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yun Xu, Xiaopeng Zhu, Guofeng Song, Qing Cao, Liang Guo, Yuzhang Li, and Lianghui Chen "Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.575291
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KEYWORDS
Quantum wells

Diffusion

Aluminum

Gallium

Chemical species

Indium gallium phosphide

Optoelectronic devices

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