Paper
12 January 2005 Optical characterization of ZnO and ZnMgO films on a-plane sapphires by molecular beam epitaxy
Shuwei Li, Cairong Ding, Guowei Yang, Xiang Zhou, Kazuto Koike
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Abstract
Recently the growth techniques of single-crystalline ZnO film promote much attention to ZnO-related materials for electronic and optoelectronic applications. ZnO and ZnMgO films were grown by radical-source molecular beam epitaxy, and the epilays on a-plane sapphire substrates had a superior quality in crystallographic, optical and electrical properties. The surface during growth was monitored by a reflection high-energy electron diffraction (RHEED) system. After the growth, these films were characterized by Field emission scanning electronic miroscopy, transmission spectrum, photoluminescence (PL) using 325 nm line of a He-Cd laser, and electrical properties were measured by Hall measurement. The n-type doping with Al was successfully performed up to 5 × 1019 cm-3. Widening of bandgap energy by increasing Mg composition was observed by transmission spectrum.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shuwei Li, Cairong Ding, Guowei Yang, Xiang Zhou, and Kazuto Koike "Optical characterization of ZnO and ZnMgO films on a-plane sapphires by molecular beam epitaxy", Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); https://doi.org/10.1117/12.570751
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Cited by 2 scholarly publications.
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KEYWORDS
Zinc oxide

Magnesium

Zinc

Sapphire

Luminescence

Molecular beam epitaxy

Charged particle optics

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