Correlation Of Submicron Linewidths Derived From Electrical And Electron-Optical Methods.

Michael T. Reilly

doi:10.1117/12.949745

2 January 1986 Correlation Of Submicron Linewidths Derived From Electrical And Electron-Optical Methods.

Michael T. Reilly

Proceedings Volume 0565, Micron and Submicron Integrated Circuit Metrology; (1986) https://doi.org/10.1117/12.949745
Event: 29th Annual Technical Symposium, 1985, San Diego, United States

Abstract

An electrical probe technique is used to measure the widths of doped polysilicon structures. The measured values are compared to those obtained with a low-voltage SEM. This is done for widths in the micron to submicron range. A correlation is performed and various accuracies reported.

Citation Download Citation

Michael T. Reilly "Correlation Of Submicron Linewidths Derived From Electrical And Electron-Optical Methods.", Proc. SPIE 0565, Micron and Submicron Integrated Circuit Metrology, (2 January 1986); https://doi.org/10.1117/12.949745

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