Bottom anti-reflective coatings for 193-nm bilayer system

Takahiro Sakaguchi; Tomoyuki Enomoto; Yasuyuki Nakajima

doi:10.1117/12.598715

4 May 2005 Bottom anti-reflective coatings for 193-nm bilayer system

Takahiro Sakaguchi, Tomoyuki Enomoto, Yasuyuki Nakajima

Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005) https://doi.org/10.1117/12.598715
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

The suitable high performances Organic Bottom Anti-Reflective Coatings (Organic BARCs) for 193nm Bilayer system, NCA900 series, were developed. Using CF4 gas as etchant, the etching rate of NCA900 series were 0.87 times slower than that of conventional 193nm photoresists. With NCA900 series, the reflectivity was less than 1% at over 300nm BARC thickness on polysilicon, silicon oxide and silicon nitride. Using conventional 193nm photoresist, 80nm L/S (1:1) patterns with 0.5-micron DOF were observed on NCA900 series. NCA900 series showed the excellent litho performance and coating property. This paper presents the development of BARCs for 193nm Bilayer system.

Citation Download Citation

Takahiro Sakaguchi, Tomoyuki Enomoto, and Yasuyuki Nakajima "Bottom anti-reflective coatings for 193-nm bilayer system", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.598715

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