Paper
5 May 2005 Lithography yield check for IC design
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Abstract
As the semiconductor industry goes into the 65nm generation, designs become more complex, mask cost increases exponentially, and the industry is pushing very hard on the lithography process. It is more and more challenging to achieve and maintain acceptable yield. Yield is not only a problem for the Fabs but also an issue that has to be considered by the chip designers. In order to save turn around time, save mask and process development cost and improve the yield, the lithography problems need to be resolved at the design stage. The designers need to be aware of the lithography behavior of their design and be able to modify the design if it causes yield problems in the lithography process. In this paper, we discuss a new tool, a Litho Yield Checker, which can be run stand-alone but is also fully integrated with a Layout Editor, that provides its user with an easy way to visualize how the layouts are to be printed on wafer, and see the common process window (CPW) for the most important locations in the design.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lynn Cai and Ting Chen "Lithography yield check for IC design", Proc. SPIE 5756, Design and Process Integration for Microelectronic Manufacturing III, (5 May 2005); https://doi.org/10.1117/12.600636
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Optical proximity correction

Lithography

Resolution enhancement technologies

Silicon

Manufacturing

Photomasks

Yield improvement

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