Advancements in HgCdTe VLWIR materials

Angelo S. Gilmore; J. Bangs; A. Gerrish; A. Stevens; B. Starr

doi:10.1117/12.607604

31 May 2005 Advancements in HgCdTe VLWIR materials

Angelo S. Gilmore, J. Bangs, A. Gerrish, A. Stevens, B. Starr

Proceedings Volume 5783, Infrared Technology and Applications XXXI; (2005) https://doi.org/10.1117/12.607604
Event: Defense and Security, 2005, Orlando, Florida, United States

Abstract

Raytheon Vision Systems has achieved significant improvements in VLWIR (very long wavelength infrared) detector materials. These small bandgap detector materials are susceptible to tunneling of carriers across the bandgap via either band-to-band or trap-assisted tunneling phenomena. RVS' new procedures reduce exposure of the highly sensitive p-n junction to possible contamination sources during growth and processing. This reduction in impurities reduces the tunneling component of the detector current and yields high quality detectors out to the VLWIR range. Evidence of a highly uniform detector fabrication process is detailed within spanning the LWIR to VLWIR wavelength range.

Citation Download Citation

Angelo S. Gilmore, J. Bangs, A. Gerrish, A. Stevens, and B. Starr "Advancements in HgCdTe VLWIR materials", Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); https://doi.org/10.1117/12.607604

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