Paper
18 May 2005 Terahertz-frequency quantum oscillator operating in the positive differential resistance region
Author Affiliations +
Abstract
The traditional implementation of resonant tunneling diodes (RTD) as a high-frequency power source always requires the utilization of negative-differential resistance (NDR). However, there are inherent problems associated with effectively utilizing the two-terminal NDR gain to achieve significant levels of output power. This paper will present a new design methodology where resonant tunneling structures (RTS) are engineered to exhibit electronic instabilities within the positive-differential-resistance (PDR) region. As will be demonstrated, this approach utilizes a microscopic instability that alleviates the need to reduce device area (and therefore output power) in an effort to achieve low-frequency stabilization.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peiji Zhao, Dwight Woolard, Matthew Lasater, C. T. Kelley, and Robert Trew "Terahertz-frequency quantum oscillator operating in the positive differential resistance region", Proc. SPIE 5790, Terahertz for Military and Security Applications III, (18 May 2005); https://doi.org/10.1117/12.602727
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Electrons

Oscillators

Resistance

Quantum wells

Gallium arsenide

Scattering

Aluminum

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