Simulation of quartz phase etch affect on performance of ArF chrome-less hard shifter for 65-nm technology

K. T. Park; Martin Sczyrba; Karsten Bubke; Rainer Pforr

doi:10.1117/12.617205

28 June 2005 Simulation of quartz phase etch affect on performance of ArF chrome-less hard shifter for 65-nm technology

K. T. Park, Martin Sczyrba, Karsten Bubke, Rainer Pforr

Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617205
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan

Abstract

The Cr-less Phase Shift Mask (CLPSM) has been considered as one of the most practical resolution enhancement techniques (RET) solution providing low Mask Error Enhancement Factor (MEEF) for low k1 geometries for memory and logic semiconductor devices. There are several papers that show the advantages of the CLPSM compared to the other types of RET. Also the required design changes have been widely studied. Manufacturing of CLPSM requires quartz etching additionally to the COG mask process. Contrary to CLPSM, the required characteristics of the quartz etching process for altPSM are well specified. However, the required quality of the etching process for the CLPSM has not been sufficiently evaluated yet. In this paper, the impact of imperfections of the mask manufacturing process, like the effect of quartz sidewall profile, etch depth deviation and quartz trenching during quartz dry etching on mask imaging performance is investigated. Simulations were performed using Solid-CTM to investigate these effects for both mesa and trench type CLPSM for different pitches. A CLPSM mask was manufactured at AMTC to confirm the validity of the simulation through comparing the contrast deviation on various mesa and trench sizes. AIMS measurements have been performed for this purpose.

Citation Download Citation

K. T. Park, Martin Sczyrba, Karsten Bubke, and Rainer Pforr "Simulation of quartz phase etch affect on performance of ArF chrome-less hard shifter for 65-nm technology", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617205

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