Improved light extraction efficiency in III-nitride photonic crystal light-emitting diodes

Dong-Ho Kim D.V.M.; Jaehoon Kim; Heonsu Jeon; Yoon Soo Park; Jaehee Cho; Jin Seo Im; Cheolsoo Sone; Yongjo Park

doi:10.1117/12.623511

2 September 2005 Improved light extraction efficiency in III-nitride photonic crystal light-emitting diodes

Dong-Ho Kim D.V.M., Jaehoon Kim, Heonsu Jeon, Yoon Soo Park, Jaehee Cho, Jin Seo Im, Cheolsoo Sone, Yongjo Park

Proceedings Volume 5941, Fifth International Conference on Solid State Lighting; 59410M (2005) https://doi.org/10.1117/12.623511
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

We observed a significant enhancement in light output from GaN-based light-emitting diodes (LEDs) in which two-dimensional photonic crystal (PC) patterns were integrated. We approached two types PC LEDs. One is top loaded PC LEDs. The PC patterns were generated on the top p-GaN layer. The other is bottom loaded PC LEDs. In this LEDs, PC patterns were integrated on the sapphire substrate. Two dimensional square-lattice air-hole array patterns, whose period was varied between 300 and 700nm, were generated by laser holography. Unlike the commonly utilized electron-beam lithographic technique, the holographic method can make patterns over a large area with high throughput. The resultant PC-LED devices with a pattern period of ~500nm had more than double the output power. The experimental observations are qualitatively consistent with three-dimensional finite-difference-time-domain simulation results.

Citation Download Citation

Dong-Ho Kim D.V.M., Jaehoon Kim, Heonsu Jeon, Yoon Soo Park, Jaehee Cho, Jin Seo Im, Cheolsoo Sone, and Yongjo Park "Improved light extraction efficiency in III-nitride photonic crystal light-emitting diodes", Proc. SPIE 5941, Fifth International Conference on Solid State Lighting, 59410M (2 September 2005); https://doi.org/10.1117/12.623511

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