Hot carrier photocapacitive effect

Steponas Ašmontas; Jonas Gradauskas; Algirdas Sužiedėlis; Edmundas Širmulis; Antanas Urbelis

doi:10.1117/12.639324

13 June 2006 Hot carrier photocapacitive effect

Steponas Ašmontas, Jonas Gradauskas, Algirdas Sužiedėlis, Edmundas Širmulis, Antanas Urbelis

Proceedings Volume 5946, Optical Materials and Applications; 594619 (2006) https://doi.org/10.1117/12.639324
Event: Optical Materials and Applications, 2005, Tartu, Estonia

Abstract

Semiconductor p-n and metal-insulator-semiconductor structures containing a capacitive element were investigated under pulsed ir laser irradiation. It is shown that the carrier heating in the structures is responsible for the rise of the photosignal. A direct correlation between the photosignal and the capacitance of the structures is confirmed. Possible applications of the effect are discussed.

Citation Download Citation

Steponas Ašmontas, Jonas Gradauskas, Algirdas Sužiedėlis, Edmundas Širmulis, and Antanas Urbelis "Hot carrier photocapacitive effect", Proc. SPIE 5946, Optical Materials and Applications, 594619 (13 June 2006); https://doi.org/10.1117/12.639324

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