Low-threshold oxide-confined compact edge-emitting semiconductor laser diodes with high-reflectivity 1D photonic crystal mirrors

Grant Erwin; A. C. Bryce; Richard M. De La Rue

doi:10.1117/12.622969

11 October 2005 Low-threshold oxide-confined compact edge-emitting semiconductor laser diodes with high-reflectivity 1D photonic crystal mirrors

Grant Erwin, A. C. Bryce, Richard M. De La Rue

Author Affiliations +

Proceedings Volume 5958, Lasers and Applications; 59580E (2005) https://doi.org/10.1117/12.622969
Event: Congress on Optics and Optoelectronics, 2005, Warsaw, Poland

Abstract

We present preliminary results on low-threshold compact edge-emitting laser structures incorporating high-reflectivity 1D photonic crystal mirrors. In addition we present 2-D FDTD simulation results of the mirror reflectivity and application of selective oxidation for the purpose of current confinement, hence reduction of threshold current. 84um cavity length 1D PC lasers are demonstrated to have a threshold current of approximately 5mA, reduced to 1.7mA upon application of oxide confined current aperture.

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Grant Erwin, A. C. Bryce, and Richard M. De La Rue "Low-threshold oxide-confined compact edge-emitting semiconductor laser diodes with high-reflectivity 1D photonic crystal mirrors", Proc. SPIE 5958, Lasers and Applications, 59580E (11 October 2005); https://doi.org/10.1117/12.622969

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