Design, fabrication, and characterization of high-performance solar-blind AlGaN photodetectors

Ekmel Ozbay

doi:10.1117/12.630086

25 October 2005 Design, fabrication, and characterization of high-performance solar-blind AlGaN photodetectors

Ekmel Ozbay

Proceedings Volume 6013, Optoelectronic Devices: Physics, Fabrication, and Application II; 601307 (2005) https://doi.org/10.1117/12.630086
Event: Optics East 2005, 2005, Boston, MA, United States

Abstract

Design, fabrication, and characterization of high-performance AlxGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal (MSM) photodiodes. The resulting solar-blind AlGaN detectors exhibited low dark current, high detectivity, and high bandwidth.

Citation Download Citation

Ekmel Ozbay "Design, fabrication, and characterization of high-performance solar-blind AlGaN photodetectors", Proc. SPIE 6013, Optoelectronic Devices: Physics, Fabrication, and Application II, 601307 (25 October 2005); https://doi.org/10.1117/12.630086

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